The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
碩士 === 國立交通大學 === 電子工程系 === 91 === When the gate oxide thickness downs to 1.0 nm regime, the direct-tunneling current becomes main key issue for high-performance CMOS beyond 0.1μm. In my research work, we have developed high-quality silicon oxynitride (SiON) with physical thickness 1.0 nm...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52171899853973658131 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 91 === When the gate oxide thickness downs to 1.0 nm regime, the direct-tunneling current becomes main key issue for high-performance CMOS beyond 0.1μm. In my research work, we have developed high-quality silicon oxynitride (SiON) with physical thickness 1.0 nm (EOT = 0.86 nm) gate dielectric using rapid thermal processing (RTP). The 1.0 nm ultra-thin oxynitride was grown by rapid thermal process in N2 and O2 mixed gas ambient, in term of oxidation temperature, process time control and the flow ratio of N2/O2 mixed gas as comparison with O2 grown oxide. The thickness of oxynitride film is determined by ellipsometer and verified by high resolution TEM (HR-TEM). The experiments show that 1.0nm SiON oxynitride grown by RTP at 900℃ for 15 sec has the lowest density of the interface states and the leakage current is two orders lower than that of a RTO sample. This excellent experimental result is due to a proper amount of nitrogen incorporated in the thin oxynitride film during RTP oxidation process in N2/O2 mixed gas ambient. The nitrogen incorporated can improve the integrity of thin oxynitride film and the interface state between the Si-substrate and ultra-thin oxynitride film.
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