Trapped Charge Energy Distribution and Transport Behavior in SONOS Flash Cells
碩士 === 國立交通大學 === 電子工程系 === 91 === This thesis will focus on the discussion of trapped charge energy distribution in nitride layer and reliability issues induced by trapped charge lateral transport in a SONOS type trapping storage cell, which include program state threshold voltage shift,...
Main Authors: | Hsin-Kai Chiang, 江欣凱 |
---|---|
Other Authors: | Tahui Wang |
Format: | Others |
Language: | zh-TW |
Published: |
2003
|
Online Access: | http://ndltd.ncl.edu.tw/handle/69934359597563611598 |
Similar Items
-
Study of lateral charge distribution for SONOS flash memory device by modified Charge Pumping technique
by: Yu, Ching-Shuang, et al.
Published: (2009) -
Investigation of Trapped Charge Lateral Transport of Silicon Nitride-Based Charge Trap Flash Memory by Numerical Simulation
by: Yang, Chin-Min, et al.
Published: (2018) -
Operation Characteristic of Charge-Trapping-type Flash Memory Device with Charge-trapping layer of stacked dielectrics
by: Te-Chiang Liu, et al.
Published: (2008) -
Process Study of Trapping and Blocking Layers on Gate-All-Around Junctionless Charge Trapping Flash Memory Devices
by: Cheng, Chia-Hsin, et al.
Published: (2016) -
Data Pattern Effects on Trapped Charge Lateral Transport in Nitride Trap Storage Flash Memory
by: Lin, Hsiao-Yi, et al.
Published: (2017)