The Design of 2.4GHz CMOS RF Quadrature Modulator and Power Amplifier with High Common-Mode Rejection Capability for Integrated Transmitter Applications

• Main Authors: Tzung-Ming Chen, 陳宗明
• Other Authors: Chung-Yu Wu
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/90269766227849606533

碩士 === 國立交通大學 === 電子工程系 === 91 === A power amplifier with high common-mode rejection capability and a RF transmitter for Bluetooth applications are presented in this thesis. These two proposed chips are fabricated in a standard 0.25μm single-poly-five-metal CMOS process. In the transmitter chip, it consists of a quadrature modulator, a quadrature VCO, and a power amplifier. The power amplifier chip can provide up to 21.03dBm output power with 28% efficiency at 2.45GHz. The operation current of the fabricated power amplifier chip is 179mA from a 2.5V power supply voltage. Through measured results, the performance of the proposed CMOS RF power amplifier has been verified to be well suitable for short-range communication applications and can meet Bluetooth output power level class 1(20dBm). The current consumption of proposed modulator is only 25mA from a 2.5V power supply voltage. The transmitter chip with low-power-dissipation is enabled by the current reuse technique used among quadrature modulator and quadrature VCO. The 132MHz tuning range of the realized quadrature VCO can be varied from 2.353GHz to 2.465GHz while controlled voltage changes between 1V and 2.5V. Due to the variation of the LC loads of the modulator and the lower quality factor of the spiral inductor as the load of power amplifier, changes the center frequency of each stage amplifier and results in a small conversion gain of the modulator. The measured output power of the transmitter is —9.19dBm,and the measured LO leakage, image ratio of the modulated signal at the output of transmitter is —4.6dBc, -31.7dBc, respectively.