Using ECR-plasma Processing Technology to Investigate the RIE-treated Surface and to Form the Gate Dielectric and Passivation Insulator for GaN Application

Using ECR-plasma Processing Technology to Investigate the RIE-treated Surface and to Form the Gate Dielectric and Passivation Insulator for GaN Application

博士 === 國立交通大學 === 電子工程系 === 91 === GaN is a highly potential semiconductor material with the properties of wide bandgap (3.4 eV), high breakdown electric field, high carrier mobility and fair thermal conductivity. It is not only applied widely in the blue and green light emitting diodes (...

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Bibliographic Details
Main Authors:	Chao-Chen Cheng, 鄭兆禛
Other Authors:	Kow-Ming Chang
Format:	Others
Language:	en_US
Published:	2002
Online Access:	http://ndltd.ncl.edu.tw/handle/63972283195300467771

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