Ge Layer-resolved Distribution During Deposition on the Si(100) Surface Studied by Simulation

Ge Layer-resolved Distribution During Deposition on the Si(100) Surface Studied by Simulation

碩士 === 國立交通大學 === 物理研究所 === 91 === 　This thesis studied the growth process of Ge on the Si(100) surface and the Ge site correlation on the Ge/Si(100) surface by simulation. It is known that deposited Ge atoms randomly replace Si atoms on the Si(100) surface. Si atoms that are replaced dif...

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Bibliographic Details
Main Authors:	Chen-Mei Chen, 陳貞梅
Other Authors:	Deng-Sung Lin
Format:	Others
Language:	zh-TW
Published:	2003
Online Access:	http://ndltd.ncl.edu.tw/handle/56163186913218653607

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