Radiation and Re-anneal Effects of MOS Capacitor with CoSi and WSi as Gate Materials
碩士 === 國立暨南國際大學 === 電機工程學系 === 91 === Due to high melting point, high stability and low resistivity of metal silicide, the use of metal silicide to replace the conventional poly-silicon gate has become a necessary trend in recent development in integrated circuit fabrication. In the past,...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41202183704243336461 |