Study of Single-electron Transistor Model for SPICE Analysis

• Main Authors: Lin Shi-Tin, 林式庭
• Other Authors: 吳幼麟
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/59323458785523715586

碩士 === 國立暨南國際大學 === 電機工程學系 === 91 === Due to the rapid progress in nano-fabrication technologies, various nano devices have been successfully fabricated. Among them, single-electron devices have drawn many researchers’ attention due to their very promising characteristics, such as ultimate low power consumption, down-scalability to nano-scale, high density and high switching speed. Basic logic circuits constructed with single electron devices as the basic building unit have been practically implemented. Therefore, the need for new circuit simulator that can simulate single- electron circuits is urgent. If the simulator can be combined with the existing circuits simulator such as SPICE, one can further simulate those hybrid circuits that include both the single electron devices and the conventional circuit elements. Since single electron simulators based on Monte Carlo method usually involve complicated calculations and take very long computation time, in this thesis we focus on single-electron transistors’ macro model and analytical model suitable for SPICE analysis. Based on the existing macro model and analytical model found in the literature, we developed an improved macro model and an improved analytical model for single electron transistors that can be used in SPICE circuit analysis. When compared with the well-accepted Monte Carlo single electron simulator SIMON 2.0, we found that both of our proposed models can correctly predict the terminal characteristics of single electron transistors with little computation time. We also applied our proposed macro model to single electron inverters and a practical single electron XOR logic gates and obtained the voltage transfer characteristics and output waveforms successfully. In this thesis, we also reported the fabrication of a nanowire transfer resistor by using atomic force microscopy based on scanning probe lithography. From the measured characteristics of the nanowire transfer resistor, we found that they are quite different from those of the single electron transistors. We believed that it is worthy of further study of the nature of the nanowire transfer resistor.