Applying Dry Etching to Fabricate SiGe hetero-devices
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In our thesis, we cooperated with Research Center for Advanced Science and Technology (RCAST), the University of Tokyo. SiGe doped-channel field effect transistor structures were grown by solid-source molecular beam epitaxy (SSMBE) at low temperature(550°C)....
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40135517050316561780 |