The Study of Stress Effect on the Formation of CoSi2 in Deep Submicron ULSI TechnologyandThe Study of Dummy Metal Charging Effect Induced Tungsten Plug Corrosion in Deep Submicron ULSI Technology
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === Metal silicides have been developed as interconnect and contact materials for semiconductor device fabrication. Among different silicides, CoSi2 is the most widely used material for salicide technology recently, since it has immunity to narrow line width eff...
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59297850852467329072 |