The study of low temperature metal (Au) induced lateral crystallization (MILC) poly-Si1-xGex thin film for optoelectronic applications

• Main Authors: Wen-De Wang, 王文德
• Other Authors: Yean-Kuen Fang
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/85245749983477994559

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === The gold (Au) metal induced lateral crystallization (MILC) of hydrogenated amorphous silicon germanium (a-Si1-xGex:H) thin films have been investigated with various annealing temperature (400∼500℃) and annealing time (3∼10hr). After 500℃, 3∼10hr annealing treatment, the MILC rate of Au-induced a-Si1-xGex:H film can be up to 22mm/hr, which is approximate 1.3 times to that of the conventional Ni-induced. Additionally, the maximum length of induced grain with Au-induced technology is about 2 times to the one by the Ni-induced. Next, The TCR (Temperature coefficient of resistance) of the Au-induced poly-Si1-xGex is comparable to that of the film by high temperature LPCVD. Therefore the Au-induced low temperature MILC technology can replace the high temperature LPCVD process to develop low cost poly-Si1-xGex infrared bolometer. Furthermore, a M-S-M photo-detector has been developed with the Au-induced poly-Si1-xGex to verify usability of the technology. Experimental results show that under room temperature, the ratio of photo/dark current gain is 8, which is good enough for real applications.