| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === Indium tin oxide (ITO) films are used extensively in opto-electrical devices because of their high transmittance in visible range, high absorption in ultraviolet range, high reflection in infrared range, and low resistivity. In this study, ITO films were deposited on automobile glasses by ion beam sputtering. The effects of ion beam voltage and annealing conduction on the composition, microstructure, optical, and electrical properties of ITO films were investigated.
Quantitative XPS analysis showed that the ITO films were non-stoichiometric. The oxygen vacancy increased with ion beam voltage. The properties optical and electrical were dominated by different contents of oxygen vacancy. ITO films, deposited by high ion beam voltage (450V), exhibited optimum electrical properties and low transmittance as 3.34×10-4Ω-cm, and 82%, respectively. In addition, the ITO films, deposited by lower ion beam voltage (300V), represented higher transmittance about 91% and higher resistivity.
After annealing 500℃ with different time, the amorphous ITO films were transferred to crystalline structure. The microstructure and chemical composition of ITO films depended on annealing process. The transmittance of ITO films, that deposited by high ion beam voltage (450) and then annealed with 500℃/1hr, was improved to 90%, and resistivity 1.77×10-4Ω-cm, respectively.
Reliability of ITO films was important for application in automobile galsses. The transmittance, resistivity and adhesion of ITO films were measured after ultraviolet light exposing. The properties as-deposited and annealed ITO films after UV light exposing exhibited same performance. It means the ITO films deposited by ion beam sputtering had good quality stability.
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