Characterization of ultrathin silicon oxynitride interlayer in combination with tantalum oxide for gate dielectric applications
博士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === In Chapter 1, ultrathin silicon oxynitride (SiOxNy) less than 25 Å has been grown by low-temperature (at 450oC) N2O and NH3 plasma immersion on Si surface. The bonding structures and their distribution in depth, as well as the quantity of nitrogen in the Si...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67668825905406344493 |