| Summary: | 碩士 === 崑山科技大學 === 電機工程研究所 === 91 === In this thesis, we use the In0.52Al0.48As Barrier layer to confine the electron in the In0.535Ga0.465As channel layer. The electon mobility can be improved by using InGaAs channel.
The electron mobility are 9600 cm2/v-s and 37400 cm2/v-s under 300K and 77K, respectively.
The characteristics of the device will be discussed under different temperature (300K, 325K, 350K, 375K, 400K, 425K). The extrinsic transconductance and saturatiom current density are 208mS/mm
and 296mA/mm under 300K. The extrinsic transconductance and saturatiom current density are 166mS/mm and 268mA/mm under 77K.
In the meanwhile, we simulate and measure the lattice quality of InGaAs channel layer by Double Crystal X-ray diffraction analyzer.
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