Investigation of MOS-BJT-NDR Devices and Applications Suitable for VLSI Design
碩士 === 崑山科技大學 === 電子工程研究所 === 91 === In this thesis we propose MOS-BJT-NDR circuits to fulfill the NDR characteristics of traditional resonant tunneling diodes. We also utilize the basic MOS-BJT-NDR cell to proceed with further study by simulation, analysis and design. In the beginning we present th...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26d53r |
| Summary: | 碩士 === 崑山科技大學 === 電子工程研究所 === 91 === In this thesis we propose MOS-BJT-NDR circuits to fulfill the NDR characteristics of traditional resonant tunneling diodes. We also utilize the basic MOS-BJT-NDR cell to proceed with further study by simulation, analysis and design. In the beginning we present three different kinds of MOS-BJT-NDR circuits and put these circuits into parallel or serial structure to achieve multi-peak NDR circuits. These MOS-BJT-NDR circuits can be used as resonant tunneling diode device without considering the match problem of crystal lattice. It has the advantage of adjusting the peak current or valley current easily.
We use H-SPICE software to simulate those MOS-BJT-NDR circuits. Not only analyze these circuits but also design it. In order to prove the possibility and reliability, we use detailed simulation results to implement these NDR circuits into IC chips by TSMC 0.35SiGe_3P3M process. We verify those I-V characteristics of NDR circuits by Tektronix 370B and HP 4155A instruments and compare with H-SPICE simulation results. In the application of NDR circuits, we base on those MOS-BJT-NDR circuits to acquire multi-peak circuits by parallel or serial structure.
Finally, we propose a new NDR circuit. It has the high-speed character. We will accomplish the new multi-peak NDR circuit by H-SPICE software. It will have a high potential in digital logic application.
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