The Effects of Cl Inductively Coupled Plasma on p-GaN Thin Film
碩士 === 義守大學 === 電子工程學系 === 91 === The etching rate is increasing with the larger RF power because the larger RF power, the stronger ion energy. The etching rate also increases with the ICP power from 400 to 600W because the higher ion density. However, The etching rate decreases when the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27356389590754625854 |