| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 91 === This study investigated the electrical properties of buried resistor in the borosilicate glass-ceramics LTCC substrates. The relationships between the electrical properties and microstructures of the resistors were discussed. Homemade resistors were printed on the Al2O3 substrates and buried in the LTCC substrates.
Conductive particles of the resistors agglomerated during heat-treatment. When the conductor-agglomeration of the resistor film reached 52vol%, the agglomerated conductive particles formed a continuous linkage structure, and the resistance of the resistors showed a consistent value. When the volume frictions of the RuO2 conductive agglomeration were at values between 42 to 52vol%, the resistance of the films decreased with increasing the RuO2 agglomeration volume fractions. The RuO2 agglomerate dispersed in the glass matrix of the resistor conductor and the network of the conductive particles disappeared when the volume friction of the RuO2 agglomeration was lower than 42vol%. The results of RuO2 agglomeration volume friction vs. resistivity of the embedded resistor films matched the conduction model developed by Vest.
Migration of the glass compositions between the resistor film and LTCC substrates determined the phase separation during sintering. Compositions of B2O3、SiO2 and CaO diffused from substrate to the resistor film, and the Pb2+ ion migrated from the resistor film to substrate layer.
In order to made lead(Pb) free resistor paste, a glass without Pb was prepared. A lead borosilicate glass was also prepared in order to compared with lead free paste. For the resistor with leaded glass had higher resistance than that with lead-free glass. Adding TiO2 and Fe2O3 to the lead-free resistor paste, the TCR value of the resistor decreased.
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