A Study on the Plasma Diagnostic of PbZr0.54Ti0.46O3 Sputter Deposition

• Main Authors: Ming-Zhi Lin, 林明志
• Other Authors: Ju-Liang He
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/zm95ae

碩士 === 逢甲大學 === 材料科學所 === 91 === The properties and processing parameters of sputtering PZT ferroelectric thin film are closely linked. Therefore, two dual-target sets Pb/PZT and PbO/PZT were used to co-sputtering deposit PZT thin films on Si/SiO2/Ti/Pt substrates respectively to reveal how Pb component, discharging power, and substrates temperature affected plasma parameters, the microstructures, and the ferroelectricity of PZT thin film. The results of plasma diagnosis show that no matter using Pb/PZT or PbO/PZT sets, the density of metal species in plasma was lower than RGA detect in limit. Non-metal species, like O2 and Ar did are independent of discharge power, but O2 density decreases with increasing substrate temperature. It results from the formation of perovskite consuming more Oxygen for PZT thin film at high temperature. It also results from the change of Ar/O2 ratio. The higher ionization rate of Argon results in increasing plasma density with substrate temperature. For film microstructure, no matter using, the proper substrates temperature and discharge power of Pb and PbO targets are necessary to achieve high purity PZT. Insufficient temperature and lead content will cause the formation of pyrochlore and Pb3O4 phases. Deposition rate of PZT film is higher at low substrate temperature and high discharge power of Pb and PbO targets. However, in deposition parameters for perovskite phase PZT film, the change of deposit growth rate is small. For both lead complement sets, the PZT deposited above 500℃ exhibit polarization behavior. When Pb target power is over 30 W, the perovskite phase PZT does not show such behavior. The polarization values of PZT film deposited by Pb/PZT and PbO/PZT sets are Pr=2.5 µC/cm2，Ps=18 µC/cm2及Pr=22 µC/cm2，Ps=56 µC/cm2 respectively.