Intrinsic and diffusion barrier properties of conventional/inductively coupled plasma passivation(nitrided)tungsten thin film for copper metalliation
碩士 === 逢甲大學 === 材料科學所 === 91 === This work employed conventional (diode) and inductively coupled plasma (ICP) magnetron sputtering to deposit thin films of tungsten having thickness 40 (or 20) nm. The effect of varying the deposition parameters (background pressure, substrate bias, and sputtering pr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8c4ybz |