Growth and Characterization of CdTe Epilayers and Nano-Structures
碩士 === 中原大學 === 應用物理研究所 === 91 === Abstract CdTe epilayers were grown on the GaAs (100) substrates with the ZnSe and ZnTe buffer layers by the molecular beam epitaxy. The optimized growth condition, which was achieved by adjusting the II/VI group element flux ratio and the thickness of the ZnSe and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fu36h9 |