| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 91 === In this dissertation, a high quality quaternary compound ZnSSeTe thin film was grown on semi-insulated GaAs substrates by molecule beam epitaxy (MBE) system. The crystal quality, optical and electrical properties of a high quality quaternary compound ZnSSeTe thin films were investigated by high-resolution X-ray diffraction (XPD), photoluminescence (PL), and I-V measurements. Finally, the responsivity of the fabricated ZnSSeTe based photodetectors with different growth parameters photodetectors would be studied.
Analytical results that PL spectra of the ZnSSeTe layers were sensitive on Tellurium concentration but not sensitive on Sulfur content. Moreover, it was found the ZnSSeTe epitaxial layers not only have high crystal quality and mismatch below 0.07% with substrate but also keep the emission properties of Ten-cluster bound state.
Finally, the high quality quaternary compound ZnSSeTe thin film was grown on semi-isulated GaAs substrates successfully. In addition, the Ni/Au films were deposited on ZnSSeTe by e-beam and fabricated MSM photodetectors.
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