Characterizations of InGaAs epilayer on InP substrate grown by LPE

• Main Authors: Hsing-Ju Chen, 陳幸茹
• Other Authors: Wu-Yih Uen
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/chysme

碩士 === 中原大學 === 電子工程研究所 === 91 === Rare-Earth (RE) treated III-V compound semiconductors have been of great interest recently. Many research had discovered that the RE elements have a strong affinity to oxygen and other group VI elements, and this effect can be used to perform effective gettering of background donors and acceptors in III-V semiconductors. In this study, we grow In0.53Ga0.47As epilayers on (100)-oriented InP substrate by liquid phase epitaxy(LPE) and add Rare-Earth elements (Ho) into the growth solution to reduce the background carrier concentration. The influence of Ho on the optical characteristics and electrical characteristics of the semiconductor material is investigated. We have obtained the InGaAs on InP which the almost lattice match and the surface was very smooth. From DCXD measurements, it is found the surface morphologies of the In0.53Ga0.47As layers become poorer since the lattice mismatch increases as the Ho weight percentage increases. But, the lattice mismatch was lower than 0.035%. From PL and Hall measurements, optical and electrical characterizations of InGaAs epilayers indicate that both optical and electrical properties of InGaAs epilayers are improved by Ho treatment. Finally, we performed originally the In0.53Ga0.47As liquid phase epitaxial lateral overgrowth on patterned InP(100) substrate. By N-DIC andμ-PL measurements, we found different layer qualities with and without patterned InP substrates.