The Study of Simulation and Modeling in SONOS Memory Devices

• Main Authors: Li-Kang Wu, 吳立康
• Other Authors: Erik Jeng
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/wje923

碩士 === 中原大學 === 電子工程研究所 === 91 === Abstract Recently, Non-Volatile Memory (NVM) devices play important roles permanent in development and investigation of memory devices. And the portable electrical merchandises are popularization, for example: notebook, cellular phone and memory card etc.. The NVM devices advance fast in fabrication technology, structure, operation condition and circuit layout. The structure of NVM devices is improved from ROM and PROM to EPROM, EEPROM and Flash Memory. However, SONOS memory devices are taken a big notice recently because of its complete compatibility with existing advanced CMOS technology. Besides, it also can cost down because that it can achieve two-bit per cell. This thesis is based on “Parameter Extraction of Si-implanted SONOS Memory Devices” and using TSUPREM4 with MEDICI to simulate the cell. During simulation, using channel hot electron injection to program possesses localized trapping characterization. The forward read and reverse read are compared during simulation. The parameter extraction is used BSIM3v3 to fit all ID-VG curve. Finally, using HSPICE simulates these parameters and the simulated value of read current can be differentiated the (0, 0), (0, 1), (1, 0) and (1, 1) state.