Development of Calibration Methodology for the Simulation of Deep Submicron DRAM Devices
碩士 === 長庚大學 === 半導體科技研究所 === 91 === Short channel effect (SCE) occurs with device shrinkage and it results in threshold voltage roll-off with the gate length. Halo implantation is usually used to suppress SCE. However, it causes boron pile-up at channel edges and reverse short cannel effect (RSCE)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74250676179503429035 |