Studies on Characteristics of Selectively Oxidized and Ion Implanted AlGaAs DBRs
博士 === 國防大學中正理工學院 === 國防科學研究所 === 91 === We discuss the effects of lateral wet oxidation and ion implantation on AlGaAs DBRs. The AlxGa1-xAs oxide is stable, amorphous, solid-phase (AlxGa1-x)2O3. For AlxGa1-xAs layers embedded in multi-layer structure, a stable oxidation process is achi...
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| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44662512495791779051 |