The Characteristics of GaN MIS Capacitor Using Photo-CVD SiO2 and Its Application in UV Photodetector

The Characteristics of GaN MIS Capacitor Using Photo-CVD SiO2 and Its Application in UV Photodetector

碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 90 === For the formation of high-quality SiO2 Films using direct photo chemical vapor deposition (DPCVD) on the various semiconductor substrates has been proposed and investigated in this thesis. It was established that good and reliable properties of...

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Bibliographic Details
Main Authors:	Jung-Ran Chiou, 邱榮仁
Other Authors:	Bohr-Ran Huang
Format:	Others
Language:	en_US
Published:	2002
Online Access:	http://ndltd.ncl.edu.tw/handle/73589920330926125647

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