A Study of Barium Strontium Titanate High Dielectric Thin Films Deposited by RF-Sputter

• Main Authors: Yang-Chian Lee, 李彥謙
• Other Authors: Shih-Chih Chen
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/17647841757767394853

碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 90 === In this thesis, barium strontium titanate thin films were deposited at different growth temperatures by radio-frequency (RF) magnetron sputtering. Then the dielectric films were processed by O2 plasma surface treatment, furnace annealing, and pre-O2 plasma treatment. The electrical and physical properties of the deposited Barium Strontium Titanate thin films were investigated. In this study, the application of Al/BST/Pt/Ti/SiO2/Si for Metal-Insulator- Metal (MIM) capacitors were investigated. Dielectric constant was decayed slightly with increasing of O2 plasma treatment duration. But the leakage current of negative biased voltage was suppressed. When as-deposited BST films were treated with oxygen plasma for 20 minutes, it’s relative dielectric constant was obtained about 183. It was also found that the leakage current densities were measured about 5.83×10-8 A/cm2 and 6.6×10-7 A/cm2 at positive and negative applied voltages of 1.5 V, respectively. The relative dielectric constant of as-deposited BST films were treated with pre-oxygen plasma for 20 minutes was about 101. It was also found that the leakage current density is equal to 1.21×10-8 A/cm2 at a positive applied voltage of 1.5 V. When as-deposited BST films were exposed under furnace O2 annealing at 650℃ for 30 min. It’s relative dielectric constant was about 254, and it’s leakage current density was about 4.1×10-8 A/cm2.