| Summary: | 碩士 === 大同大學 === 機械工程研究所 === 90 === Abstract
In RF analog, the inductors and capacitors were used in the oscillator and power amplifier (PA) devices, and the switch was applied to change the inductance and capacitance.
Reducing the number of inductor and capacitors in VCO or PA, the tunable devices such as tunable inductor or tunable capacitor should be used. MEM provides the movable devices built technology in small scale. Therefore the tunable inductor is presented in the thesis by using MEMS technology.
In the studying, the winding layers of the tunable inductor were Al and Cr or Cu and Ti with compound structure, and the photoresist was used as the sacrificial layer material. The electroplating technology and the evaporating were applied to deposit the metal materials. The variable inductance is based on the change of the coefficient of thermal expansion (CTE) of The compound materials. Finally, the varied inductance form 2.6nH to 1.58nH is achieved the inductor reaches a Q of 21±3 at 2.05GHz.
|
|---|
