| Summary: | 碩士 === 大同大學 === 化學工程研究所 === 90 === In this studying, a monomer with high thermal stability N-(4-carboxyphenyl) maleimide (CPMI), was synthesized from the maleic anhydride and p-aminobenzic acid. And two another monomers, methacylic acid and 4-vinylbenzoic acid. Free radical copolymerization of those monomers and two monmers with silicon-containing, 3-(methacryloyloxy)propyltric(trimethylsiloxy)silane and methacryloxypropylbis(trimethylsiloxy)methylsilane, respectively were performed at 60~70 0C in the presence of azobisisobutyromitrile(AIBN) as an initiator in 1,4-dioxane.
After that, two different processes were adopted to synthesize the resists. The first one was to mix an inhibitor, o-nitrobenzyl cholate, into the new copolymers. The second resist was synthesized by reacting of the new copolymers with o-nitrobenzyl bromide using 1,8-diazabicyclo[5.4.0]undec -7-ene (DBU) in dimethylformamide (DMF). Finally preformed the deep-UV photoresists PRⅠ~PRⅤ.
The resists, chain-stiffening effect of the cyclic maleimide group was responsible for high thermal stabilities. After irradiation under a deep-ultraviolet (UV) light source and developed by Na2CO3 aqueous (0.01 wt%), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of the resists was at least 0.8μm and we have found that small amounts of silicon (about 14%) can drastically lower the etching rates of organic polymers (oxygen-plasma etching rate of 1：7.92 compared with hard-baked HPR-204).
|
|---|
