The Kinematic Analysis of Removal Rate of CMP

• Main Authors: Kae Horng Wang, 王凱弘
• Other Authors: Feng Tyan
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/43108771057890715682

碩士 === 淡江大學 === 航空太空工程學系 === 90 === Application of the Chemical Mechanical Polishing (CMP) is a method of planarizing semiconductor wafers. The removal rate of planarizing is influenced by both physical and chemical effects which includes the pressure distribution, relative velocity between two contact surfaces, the chemical reaction between wafer, polishing pad and slurry, the quality of the polishing pad, and so on.This thesis considers the prediction of surface consuming variation based on the relative velocity distribution on both wafer and polishing pad surface. Further discussions of CMP kinematic parameters are considered, include modifying the kinematic system and increasing the controllable kinematic parameters to improve the uniformity of polishing surface. A better combination of kinematic parameters and kinematic system will be presented after comparing simulating results and numerical calculating.Different types of diamond dresser and relative influences on polishing pad surface are also considered. Polishing trajectory density is then defined and utilized to analyze the influence of different type of grain distribution. The prediction of pad surface variance after dressingwill be presented.