Rapid and locally selective bonding of Anodic Bonding

• Main Authors: Hsueh-An Yang, 楊學安
• Other Authors: Jung-Tang Huang
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/47174478752454597237

碩士 === 國立臺北科技大學 === 製造科技研究所 === 90 === The anodic bonding, a non-intermediate bonding technology that is mainly used in glass to silicon wafer bonding, has become one of the important steps in the manufacturing process of MEMS (Microelectromhanical Systems). As a result of tight bonding without any intermediate between two layers of material, the surface roughness of the wafer must be less than 1μm. Otherwise, it will produce gas trapping in the bonding interface and affect the bonding quality. The point electrode can solve the gas-trapping problem, because the way of bonding region starting from the cathode tip and middle of the wafer, can avoid the product of gas trapping; however, the bonding time is too slow. The planar cathode can make large bonding area in short time, but the bonding quality is not quite well. This paper presents a new method of using multiple point electrodes in a spiral arrangement which is not only solving the gas-trapping problem, but also significantly reducing the bonding time in anodic bonding. In addition, this paper also presents a novel method to establish a local anodic bonding of silicon to glass with induction heating. In order to specify the locally selective bonding region, the induction heating magnetic materials, such as Fe, Co, Ni are deposited on the designated region. Then, the induction coils are moved near closed to the coated region and a HF power is provided. The results showed the temperature of the zone coated with magnetic materials rise to bond temperature only within several seconds to finish the local bonding, even the other region still keep around the room temperature.