The Influences of Native Oxide in Reaction of Ag/Ni/Ti/Si Systems

• Main Authors: Chia-Fu Liu, 劉家福
• Other Authors: Wei-chun Cheng
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/43429007958385287570

碩士 === 國立臺灣科技大學 === 機械工程系 === 90 === The influences of native oxide of the silicides formation in Ag/Ni/Ti/Si systems have been investigated by transmission electron microscopy, X-ray diffraction analysis and scanning electron microscope. For the specimen with native oxide, a TiNi3 compound was found on the specimen, but the native oxide disappear after annealing at 400℃. At 600℃, there was quite an amount of Ti4Ni4Si7 and NiSi2 on the specimen. Furthermore, there was only Ti4Ni4Si7 on the specimen after annealing at 800℃. As for the specimens without native oxide, the TiNi3 compound was the same as found on the specimen with native oxide, annealing at 400℃. The Ti4Ni4Si7 ternary compound combine with a little NiSi2 compound were found, annealing at 600℃. The Ti4Ni4Si7 was the only composition as found on the specimen with native oxide after annealing at 800℃. The native oxide can act as a barrier between films and Si. The thickness of native oxide about 10Å on Si surface was enough to retard the reaction for silicides formation in Ag/Ni/Ti/Si systems.