Optimal Design of Trench Gate Insulted Gate Bipolar Transistor

• Main Authors: Shih-Hsiang Tai, 戴士翔
• Other Authors: Miin-Horng Juang
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/99755982922692722594

碩士 === 國立臺灣科技大學 === 電子工程系 === 90 === In recent years, the performance and fabrication of IGBT’s have been significantly improved and the application field of IGBT have widely been expending, especially in high power electronic device. It is reported that the Trench-Gate IGBT has superior characteristics in power loss compared to conventional planar IGBT. In this thesis, the Trench-Gate IGBT has a high power gain, high input impedance, and high switching speed. Due to these advantage, the effort to improve the Trench-Gate IGBT performances operating above 600V and 100A/cm² are the goal in this thesis. We use TSUPREM-4 process simulator and MEDICI device simulator to modulate parameters for increasing operating speed and reducing on-state voltage drop. In order to reduce on-state voltage drop and turn-off time, the doping concentration and the size of each region are needed to modulate for optimization. In the aspect of device characteristic, it is necessary to spend a long time for switching in operating a high current density. Thus, the switching speed of this device will be slow. But, a high operating current density is good for device because that makes the on-state voltage reducing. Therefore, the trade-off between the on-state voltage drop and turn-off time is important to find the optimal parameters for this device.