Study and Fabrication of 1.3μm GaInNAs Semiconductor Laser Diode
碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === In the thesis, we have successfully grown GaInNAs/GaAs single quantum well laser samples using gas source MBE and fabricated 1.3μm strained GaInNAs/GaAs quantum well laser diodes on GaAs substrates. The PL intensity of laser samples with post rapid a...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13882726050822448884 |