Room-Temperature Processed Organic Thin Film Transistors

• Main Authors: Yen-yu Chuang, 莊儼郁
• Other Authors: 吳忠幟
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/75228396293886924094

碩士 === 國立臺灣大學 === 光電工程學研究所 === 90 === OTFTs based on conjugated polymer, oligomers, or fused aromatics have been envisioned as a viable alternative to the traditional thin-film transistors (TFTs) based on inorganic materials. The unique processing characteristics and demonstrated performance of OTFTs suggest that they may be competitive candidates for existing or novel TFT applications requiring large area coverage, structural flexibility, low temperature processing, and low cost. In this thesis, room-temperature processed pentacene organic thin film transistors have been successfully fabricated on n+-Si/SiO2 substrates and characterized. Various device structures have been examined to reduce gate current and to make output characteristics normal. The characteristics of OTFTs do scale with the channel dimensions, as expected from the conventional MISFET current formulation. Pentacene films with smaller thickness are less crystallized, therefore result in lower mobility but also lower subthreshold slope of OTFTs. Subthreshold slope 7.65 V/decade is reached for OTFTs with additional detergent/DI water treatment of the oxide surface, and saturation-region mobility 0.49 cm2/V•sec is achieved for OTFTs with additional detergent/DI water/UV-Ozone treatment of the oxide surface.