Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well

碩士 === 國立臺灣大學 === 光電工程學研究所 === 90 === In this thesis, the effects of surface states on the band structure and optical properties of n-type doped indium gallium nitride (InGaN) multiple quantum wells (MQWs) are investigated. Based on a conventional self-consistent analysis of the Schröding...

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Main Authors: Chin-Wen Shih, 石清文
Other Authors: Lung-Han Peng
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/17839320367120071044
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spelling ndltd-TW-090NTU001240152015-10-13T14:38:05Z http://ndltd.ncl.edu.tw/handle/17839320367120071044 Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well 表面態對含有n型摻雜氮化銦鎵多重量子井光學性質之研究 Chin-Wen Shih 石清文 碩士 國立臺灣大學 光電工程學研究所 90 In this thesis, the effects of surface states on the band structure and optical properties of n-type doped indium gallium nitride (InGaN) multiple quantum wells (MQWs) are investigated. Based on a conventional self-consistent analysis of the Schrödinger and Poisson equations, this calculation model incorporating surface states is conducive to solving the band structures of nitride-based MQWs. The two-dimensional electron gas (2DEG) coming from the surface states and intentional dopants congregates the material interfaces to screen the polarization charge. The phenomenon explains the hypothesis of the “periodic boundary condition of electric field” and the “equivalent charge model”. Moreover, the screening amount of polarization charge varies with the Fermi level, the temperature, and the density of injection carriers. By means of the optical pumping experiment of the InGaN MQW sample, the accuracy of the present model (called the “surface state model”) can be confirmed. The “surface state model” is more accurate than the “equivalent charge model” at the peak energy by comparing with the 300K and 77K PL results. It shows that the linearity between the piezoelectric fields screening and the peak energy shifting plays an important role in optical properties of InGaN MQWs. Lung-Han Peng 彭隆瀚 2002 學位論文 ; thesis 93 zh-TW
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language zh-TW
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description 碩士 === 國立臺灣大學 === 光電工程學研究所 === 90 === In this thesis, the effects of surface states on the band structure and optical properties of n-type doped indium gallium nitride (InGaN) multiple quantum wells (MQWs) are investigated. Based on a conventional self-consistent analysis of the Schrödinger and Poisson equations, this calculation model incorporating surface states is conducive to solving the band structures of nitride-based MQWs. The two-dimensional electron gas (2DEG) coming from the surface states and intentional dopants congregates the material interfaces to screen the polarization charge. The phenomenon explains the hypothesis of the “periodic boundary condition of electric field” and the “equivalent charge model”. Moreover, the screening amount of polarization charge varies with the Fermi level, the temperature, and the density of injection carriers. By means of the optical pumping experiment of the InGaN MQW sample, the accuracy of the present model (called the “surface state model”) can be confirmed. The “surface state model” is more accurate than the “equivalent charge model” at the peak energy by comparing with the 300K and 77K PL results. It shows that the linearity between the piezoelectric fields screening and the peak energy shifting plays an important role in optical properties of InGaN MQWs.
author2 Lung-Han Peng
author_facet Lung-Han Peng
Chin-Wen Shih
石清文
author Chin-Wen Shih
石清文
spellingShingle Chin-Wen Shih
石清文
Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well
author_sort Chin-Wen Shih
title Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well
title_short Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well
title_full Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well
title_fullStr Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well
title_full_unstemmed Surface State Effects on the Optical Properties of InGaN Multiple Quantum Well
title_sort surface state effects on the optical properties of ingan multiple quantum well
publishDate 2002
url http://ndltd.ncl.edu.tw/handle/17839320367120071044
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