Crystal Growth of Bismuth Silicate by Zone Leveling Czochralski Method

碩士 === 國立臺灣大學 === 化學工程學研究所 === 90 === Nonlinear optical (NLO) crystals are important components in optoelectronic devices, and their growth is also a critical technology in the industry. Particularly, with the fast development of the optical information processing, computing, and storage, the need o...

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Bibliographic Details
Main Authors: Hung Jen Chen, 陳煌仁
Other Authors: C.W. Lan
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/30502923516452390582
Description
Summary:碩士 === 國立臺灣大學 === 化學工程學研究所 === 90 === Nonlinear optical (NLO) crystals are important components in optoelectronic devices, and their growth is also a critical technology in the industry. Particularly, with the fast development of the optical information processing, computing, and storage, the need of photorefractive materials increases dramatically. Extensive research has been focused in this field. However, the quality of the crystals is often a bottleneck in its applications. By traditional Czochralski method, it is difficult to get good diameter control during growth. And with segregation effect, it can not grow single crystal with compositional uniformity. Therefore, we attempt to develop a non-traditional crystal growth technique, the so-called Zone-Leveling Czochralski (ZLCz) method. The ZLCz growth technique is a combination of the zone-melting (or leveling) and the Czochralski methods having the advantages of both methods. With the developed set up we have grown the important photorefractive single crystals, such as Bismuth Silicate (BSO). In this research project, we discuss the mechanism of diameter control and established the stable crystal growth condition. Nevertheless, bubble inclusion problem is always found in the process. By using an inner crucible, we are able to solve this problem.