| Summary: | 碩士 === 國立海洋大學 === 電機工程學系 === 90 === The main content of this paper concentrates on the fabrication, characterization and application of integrated CMOS differential amplifier and PZT(PbZ0.5Ti0.5 O3)thin film ultrasonic sensor by using the standard CMOS fabricating process. We used CMOS differential amplifier is used to amplify the received signal of ultrasonic sensor and improve the sensitivity of ultrasonic sensor. After ultrasonic sensor to integrate with CMOS amplifier, the performance became better than without amplifier. The maximum amplifier gain of differential amplifier is equal to 18.75, the 3-dB frequency is 10KHz and the unity-gain frequency is 100KHz. To harmony the ultrasonic sensor which was operated at 40KHz, the amplifier gain was descending from 18.75 to 5.45.
In the application of ultrasonic sensor, The fabricated sensor can measure distance information in shorter distance range. The range of fabricated device is 0cm~16cm.
In addition, we also discuss the characteristic of the PZT thin film capacitors. The study will be focused on the annealing process effect on the quality of PZT thin films, the thickness effect on PZT thin film properties. For the deposited thin films, its dielectric constant about 930, the leakage current can keep below 10-7(A/cm2), the breakdown voltage can reach to 30V upward and the films have a ferroelectric characteristic with Pr about 13.943uC/cm2 and Ec about 28.89KV/cm.
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