The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology

The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology

碩士 === 國立清華大學 === 電子工程研究所 === 90 === A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s structure co...

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Main Authors: Tzong-Liang Chen, 陳宗良
Other Authors: Joseph Ya-Min Lee
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/81601514683119457603
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spelling ndltd-TW-090NTHU04280612015-10-13T10:34:06Z http://ndltd.ncl.edu.tw/handle/81601514683119457603 The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology 利用高電壓製程技術製作可調式維持電壓靜電放電防護元件之特性分析 Tzong-Liang Chen 陳宗良 碩士 國立清華大學 電子工程研究所 90 A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s structure consists of a parasitic SCR and a P-I-N diode. The holding voltage ( ) of this device is tunable and determined by the layout dimension between anode and floating- . The holding voltage ( ) ranges from 10.4 V to 15.6 V as the spacing increases from 0 mm to 4 mm. The capability of a protection circuit using this novel device is demonstrated the human-body mode (HBM) ESD failure threshold of an output buffer is larger than 7000 V. Joseph Ya-Min Lee 李雅明 2002 學位論文 ; thesis 72 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 90 === A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s structure consists of a parasitic SCR and a P-I-N diode. The holding voltage ( ) of this device is tunable and determined by the layout dimension between anode and floating- . The holding voltage ( ) ranges from 10.4 V to 15.6 V as the spacing increases from 0 mm to 4 mm. The capability of a protection circuit using this novel device is demonstrated the human-body mode (HBM) ESD failure threshold of an output buffer is larger than 7000 V.
author2 Joseph Ya-Min Lee
author_facet Joseph Ya-Min Lee
Tzong-Liang Chen
陳宗良
author Tzong-Liang Chen
陳宗良
spellingShingle Tzong-Liang Chen
陳宗良
The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
author_sort Tzong-Liang Chen
title The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
title_short The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
title_full The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
title_fullStr The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
title_full_unstemmed The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
title_sort fabrication and characterization of tunable holding voltage electrostatic discharge (esd) protection device for high voltage integrated circuit technology
publishDate 2002
url http://ndltd.ncl.edu.tw/handle/81601514683119457603
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