The Fabrication and Characterization of Tunable Holding voltage Electrostatic Discharge (ESD) Protection Device for High Voltage Integrated Circuit Technology
碩士 === 國立清華大學 === 電子工程研究所 === 90 === A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s structure co...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81601514683119457603 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 90 === A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s structure consists of a parasitic SCR and a P-I-N diode. The holding voltage ( ) of this device is tunable and determined by the layout dimension between anode and floating- . The holding voltage ( ) ranges from 10.4 V to 15.6 V as the spacing increases from 0 mm to 4 mm. The capability of a protection circuit using this novel device is demonstrated the human-body mode (HBM) ESD failure threshold of an output buffer is larger than 7000 V.
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