Fabrication and Characterization of M(Al)/(Ba0.5Sr0.5)TiO3/Si (p-type) Field-effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 90 === N-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) using barium strontium titanate (Ba0.5,Sr0.5)TiO3 (BST) gate dielectric were successfully fabricated. The BST films are deposited by RF magnetron sputtering. The IDS-VDS and IDS-VGS...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67026444622954515927 |