The fabriaction and electrical properties of metal(Al)/ferroelectric(Pb(Zr0.6,Ti0.4)O3)/insulator(Ta2O5)/Si field-effect transistors
碩士 === 國立清華大學 === 電子工程研究所 === 90 === Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) using an Al/Pb(Zr0.6,Ti0.4)O3 (PZT)/Ta2O5/Si structure were successfully fabricated. The threshold voltage is 0.96 V and the electron mobility is 82 cm2/V-s. The gate curre...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63705280069925251054 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 90 === Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) using an Al/Pb(Zr0.6,Ti0.4)O3 (PZT)/Ta2O5/Si structure were successfully fabricated. The threshold voltage is 0.96 V and the electron mobility is 82 cm2/V-s. The gate current density is 6x10-7 A/cm2 at 800 kV/cm. The IDS-VGS characteristics depend on both the polarization of the PZT layer and the injected charges into the insulator layer. When the polarization effect is dominant, the memory window is as large as 2.7 V at an applied gate voltage of 8 V. The drain current can be controlled by a poling voltage indicating memory effect.
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