The Fabrication and Characterization of Metal-Hafnium Oxide-Semiconductor Field-effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 90 === N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using HfO2 gate oxide were fabricated successfully. The HfO2 films were deposited by RF magnetron sputtering. The C-V, ID-VD and ID—VG characteristics are measured. The minimum thre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54591319183469906457 |