A Novel CMOS Photon Sensing Device With Dark Current Cancellation and Dynamic Sensitivity
碩士 === 國立清華大學 === 電子工程研究所 === 90 === An ultra low dark signal and high sensitivity pixel has been developed for an embedded active-pixel CMOS image sensor, by using a standard 0.35-µm CMOS logic process. To achieve in-pixel dark current cancellation, we developed a combined photogate/phot...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/34764373795294838026 |