Depth Profiling Analysis of Trace Transition Metals in Thermally Diffused Silicon Wafer
碩士 === 國立清華大學 === 原子科學系 === 90 === The electrical properties of semiconductor devices are influenced not only by the total concentration but also by the spatial distribution of impurities in/on the bulk material. Diffusion of impurity atoms will occur whenever there is a concentration gradient and t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08626605673947405209 |