Investigation on High-Density Current Enhanced Amorphous Si Recrystallization, Dopant Activation and Electromigration in Doped Si
博士 === 國立清華大學 === 材料科學工程學系 === 90 === The minimization of critical dimensions in microelectronic devices gives rise to an increased density of structures per wafer. As a result, the circuit current densities and Joule heating increase with the decrease in size. In addition, at a high-dens...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k4a9w9 |