The non-linear electric resistivity of Au thin film on silicon after rapid thermal annealing

• Main Authors: wei-chi Wang, 王威智
• Other Authors: Tai-Fa Young
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/24423653539583909380

碩士 === 國立中山大學 === 物理學系研究所 === 90 === ABSTRACT In this work , a Four-Point probe electrical measurement system has been set up to investigate the non-linear conductivity of gold thin film on silicon . The annealing effect of gold thin films has been carried out by a rapid thermal annealing system using a modified tube furnace .The conductivities of gold thin film on silicon are studied for film thickness of 100-500 Å , different annealing temperature from 150-500℃, annealing duration of 10-40mins on two kinds of substrate（n-type、p-type silicon）. Samples are examined by SEM、AFM、XRD and FTIR to characterize the surface morphology of gold thin film on silicon , the silicide formation,and non-linear dc response in every different conditions. Finally , we proposed a Random Tunneling Junction Network model to explain the non-linear dc response and discussed the correlation between the tunneling junction of gold clusters and the changes of it’s distribution , the silicide formation combining with breakdown of the junction bridges and the parameters from the RTJN model. Our numerical result reveals good agreement with the experiment data.