| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 90 === ABSTRACT
In this work , a Four-Point probe electrical measurement system has been set up to investigate the non-linear conductivity of gold thin film on silicon . The annealing effect of gold thin films has been carried out by a rapid thermal annealing system using a modified tube furnace .The conductivities of gold thin film on silicon are studied for film thickness of 100-500 Å , different annealing temperature from 150-500℃, annealing duration of 10-40mins on two kinds of substrate（n-type、p-type silicon）. Samples are examined by SEM、AFM、XRD and FTIR to characterize the surface morphology of gold thin film on silicon , the silicide formation,and non-linear dc response in every different conditions.
Finally , we proposed a Random Tunneling Junction Network model to explain the non-linear dc response and discussed the correlation between the tunneling junction of gold clusters and the changes of it’s distribution , the silicide formation combining with breakdown of the junction bridges and the parameters from the RTJN model.
Our numerical result reveals good agreement with the experiment data.
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