The study and fabrication of n-type GaN MOS device
碩士 === 國立中央大學 === 光電科學研究所 === 90 === GaN has attracted much attention because of its application prospects in short-wavelength optoelectronics and high power/high temperature electronics. It is well known that compound semiconductor based metal-oxide-semiconductor (MOS) device is paved with difficul...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95665159220600921705 |