Design and Fabrication of Collector-up Hetrojunction Bipolar Transistor

• Main Authors: Chih-Shu Huang, 黃知澍
• Other Authors: Yue-Ming Hsin
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/52561567733583527798

碩士 === 國立中央大學 === 電機工程研究所 === 90 === In this work, there will be a detail discussion on fabrication and characteristics of collector-up hetrojunction bipolar transistor. In order to obtain a better device performance, an appropriate handle between the base-emitter junction is necessary, because the base-emitter junction in collector-up HBT is usually bigger than the base-collector junction. In this work, ion implantation method is used to reduce the base-emitter junction in order to achieve a current gain larger than 1. The base resistance (RB) and the base-collector junction capacitance (CBC) had been abstracted by using the HBT small signal T-model. A collector-up hetrojunction bipolar transistor (ABC = 2 ´ 4 ´ 12 mm2) with cut off frequency (fT) 12.2 GHz and maximum oscillation frequency (fmax) 22 GHz had been fabricated.