Design and Fabrication of Collector-up Hetrojunction Bipolar Transistor
碩士 === 國立中央大學 === 電機工程研究所 === 90 === In this work, there will be a detail discussion on fabrication and characteristics of collector-up hetrojunction bipolar transistor. In order to obtain a better device performance, an appropriate handle between the base-emitter junction is necessary, because the...
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/52561567733583527798 |
Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 90 === In this work, there will be a detail discussion on fabrication and characteristics of collector-up hetrojunction bipolar transistor. In order to obtain a better device performance, an appropriate handle between the base-emitter junction is necessary, because the base-emitter junction in collector-up HBT is usually bigger than the base-collector junction. In this work, ion implantation method is used to reduce the base-emitter junction in order to achieve a current gain larger than 1. The base resistance (RB) and the base-collector junction capacitance (CBC) had been abstracted by using the HBT small signal T-model. A collector-up hetrojunction bipolar transistor (ABC = 2 ´ 4 ´ 12 mm2) with cut off frequency (fT) 12.2 GHz and maximum oscillation frequency (fmax) 22 GHz had been fabricated.
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